Features
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reakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON) gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A
200 V
12 3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125 ° C
1 A
10
VGS = 4.5V, ID = 9A VGS =10V, ID = 9A
175 195 mΩ
117 150
VDS = 10V, ID = 9A
15
S
REV 1.0
1
G-38-3
NIKO-SEM
N-Channel Enhancement Mode
P1820HTFB
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
811
Ou...
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