P1825HTFB - NIKO-SEM

P1825HTFB N-Channel MOSFET

NIKO-SEM N-Channel Enhancement Mode P1825HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V 230mΩ ID 18A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1.

Features

Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 250 V 12 3 VDS = 0V, VGS = ±20V ±100 nA VDS = 250V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125 ° C 1 A 10 VGS = 4.5V, ID = 9A VGS =10V, ID = 9A 255 298 mΩ 182 230 REV 1.0 1 G-36-2 NIKO-SEM N-Channel Enhancement Mode P1825HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free Forward Transconductance1 gfs VDS = 10V, ID = 9A DYNAMIC 13 S Input Capacitance Output Capa.