P1604ETF - UNIKC

P1604ETF P-Channel Enhancement Mode MOSFET

P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °.

Features

reakdown Voltage V(BR)DSS VGS = 0V, ID = -250mA -40 Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250mA -1.5 -2.2 -3.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 Zero Gate Voltage Drain Current IDSS VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V , TJ = 125 °C -1 -10 On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V -120 Drain-Source On-State Resistance1 RDS(ON) VGS = -7V, ID = -15A VGS = -10V, ID = -25A 16 20 13 16 Forward Transconductance1 gfs VDS = -10V, ID = -25A 38 DYNAMIC Input Capacitance Output Capacitance Ciss Coss VGS = 0V, VDS = -20V, f = 1MHz 2310.