P1604ET - UNIKC

P1604ET P-Channel MOSFET

P1604ET P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -65A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 .

Features

TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = -250mA VDS = VGS, ID = -250mA VDS = 0V, VGS = ±20V -40 V -1.5 -2.2 -3 ±100 nA Zero Gate Voltage Drain Current On-State Drain Current1 IDSS ID(ON) VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V , TJ = 70 °C VDS = -5V, VGS = -10V -120 1 mA 10 A Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 gfs VGS = -10V, ID = -25A VGS = -7V, ID = -15A VDS = -10V, ID = -25A 12 16 mΩ 14 20 29 S DYNAMIC Input Capacitance Ciss 2229 Output Capacitance Cos.