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Features
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reakdown Voltage V(BR)DSS
VGS = 0V, ID = -250mA
-40
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250mA
-1.5 -2.2 -3.0
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V , TJ = 125 °C
-1 -10
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V
-120
Drain-Source On-State Resistance1 RDS(ON)
VGS = -7V, ID = -15A VGS = -10V, ID = -25A
16 20 13 16
Forward Transconductance1
gfs
VDS = -10V, ID = -25A
38
DYNAMIC
Input Capacitance Output Capacitance
Ciss Coss
VGS = 0V, VDS = -20V, f = 1MHz
2310...
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P1604ETF Data Sheet
