P1604ES - NIKO-SEM

P1604ES P-Channel Field Effect Transistor

NIKO-SEM P-Channel Enhancement Mode Field P1604ES Effect Transistor TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ ID -65A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1,2 TC = .

Features

reakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID =-250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 70 °C VDS = -5V, VGS = -10V VGS = -7V, ID = -15A VGS = -10V, ID = -25A VDS = -10V, ID = -25A LIMITS MIN TYP MAX UNIT -40 V -1.5 -2.2 -3 ±100 nA 1 µA 10 -120 A 14 20 mΩ 12 16 29 S REV 1.0 1 Apr-11-2011 NIKO-SEM P-Channel Enhancement Mode Field P1604ES.