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Features
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reakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON)
gfs
VGS = 0V, ID =-250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 70 °C VDS = -5V, VGS = -10V
VGS = -7V, ID = -15A VGS = -10V, ID = -25A VDS = -10V, ID = -25A
LIMITS MIN TYP MAX UNIT
-40 V
-1.5 -2.2 -3
±100 nA
1 µA
10
-120
A
14 20 mΩ
12 16
29
S
REV 1.0
1
Apr-11-2011
NIKO-SEM
P-Channel Enhancement Mode Field
P1604ES...
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P1604ES Data Sheet
