This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220 3 1 DPAK 3 2 1 IP.
Type
VDSS (@TJmax)
STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
650 V 650 V 650 V 650 V 650 V 650 V
RDS(on) max
0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω
ID
10 A 10 A 10 A 10 A 10 A(1) 10 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P11NM60 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
2 | P11NM60FP |
STMicroelectronics |
STP11NM60FP | |
3 | P11NM50N |
STMicroelectronics |
STP11NM50N | |
4 | P11NM80 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
5 | P11N50CF |
Fairchild Semiconductor |
FQP11N50CF | |
6 | P11N50Z |
ON Semiconductor |
NDP11N50Z | |
7 | P11NB40FP |
STMicroelectronics |
STP11NB40FP | |
8 | P11NK50Z |
STMicroelectronics |
STP11NK50Z | |
9 | P11NK50ZFP |
STMicroelectronics |
STP11NK50ZFP | |
10 | P110 |
TT |
Panel Potentiometer | |
11 | P1100EA |
RUILON |
Thyristor Surge Suppressors | |
12 | P1100EA |
Littelfuse |
Protection Thyristors |