The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D2PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Tabl.
Type
STB11NK50Z STP11NK50ZFP
STP11NK50Z
VDSS
500 V 500 V 500 V
RDS(on) max
ID
Pw
< 0.52 Ω 10 A 125 W < 0.52 Ω 10 A 30 W < 0.52 Ω 10 A 125 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
3 2 1
TO-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | P11NK50ZFP |
STMicroelectronics |
STP11NK50ZFP | |
2 | P11N50CF |
Fairchild Semiconductor |
FQP11N50CF | |
3 | P11N50Z |
ON Semiconductor |
NDP11N50Z | |
4 | P11NB40FP |
STMicroelectronics |
STP11NB40FP | |
5 | P11NM50N |
STMicroelectronics |
STP11NM50N | |
6 | P11NM60 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
7 | P11NM60FP |
STMicroelectronics |
STP11NM60FP | |
8 | P11NM60N |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
9 | P11NM80 |
STMicroelectronics |
N-CHANNEL Power MOSFET | |
10 | P110 |
TT |
Panel Potentiometer | |
11 | P1100EA |
RUILON |
Thyristor Surge Suppressors | |
12 | P1100EA |
Littelfuse |
Protection Thyristors |