P11NM50N - STMicroelectronics

P11NM50N STP11NM50N

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 Figure.

Features

Order codes STD11NM50N STF11NM50N STP11NM50N VDSS @TJmax RDS(on) max 550 V < 0.47 Ω ID 8.5 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 Figur.