P11NM60 - STMicroelectronics

P11NM60 N-CHANNEL Power MOSFET

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performan.

Features

www.DataSheet4U.com Type VDSS (@TJ=TJmax) 650V 650V 650V 650V RDS(on) <0.45Ω <0.45Ω <0.45Ω <0.45Ω ID 3 STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1
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■ 11A 11A 11A 11A TO-220 1 2 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 3 12 D2PAK i2PAK Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt a.