NX3020NAKV - nexperia

NX3020NAKV Dual N-channel MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3. Applications • Relay driver • High-speed line driver • Low-side.

Features

• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage 3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 200 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 2.7 4.5 Ω [1] Device.