NX3020NAKV |
Part Number | NX3020NAKV |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefi... |
Features |
• Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltage 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - - 200 mA Static characteristics (per transistor) RDSon drain-source on-state VGS = 10 V; ID = 100 mA; Tj = 25 °C resistance - 2.7 4.5 Ω [1] Device... |
Document |
NX3020NAKV Data Sheet
PDF 695.03KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | NX3020NAK |
NXP |
single N-channel Trench MOSFET | |
2 | NX3020NAK |
nexperia |
N-channel MOSFET | |
3 | NX3020NAKS |
NXP |
MOSFET | |
4 | NX3020NAKS |
nexperia |
dual N-channel MOSFET | |
5 | NX3020NAKT |
NXP Semiconductors |
MOSFET |