NX3008CBKS - nexperia

NX3008CBKS N/P-channel MOSFET

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Level shift.

Features

 Low threshold voltage
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified 1.3 Applications
 Level shifter
 Power supply converter
 Load switch
 Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID drain current TR1 (N-channel) Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C -8 [1] - - -30 8 -200 V V mA VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 .