NX3008CBKV - NXP Semiconductors

NX3008CBKV MOSFET

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications .

Features

 Low threshold voltage
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified 1.3 Applications
 Level shifter
 Power supply converter
 Load switch
 Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source voltage gate-source voltage drain current drain-source on-state resistance drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C [1] .