NX3020NAKS - NXP

NX3020NAKS MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side load.

Features

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• Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications
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• Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 30 20 180 Unit V V mA Static characteristics (per transistor) drain-source on-state resistance [1] 2 - 2.7 4.5 Ω Device mounted on an FR4 Pr.