NX3008PBKV - NXP Semiconductors

NX3008PBKV MOSFET

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay dri.

Features

 Very fast switching
 Low threshold voltage
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified 1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 2.8 Max -30 8 -220 4.1 Unit V V mA Ω Per transistor Static characteristics (per transistor) drain-source on-state VGS = -4.5 V; ID = -200 mA; resistance Tj = .