P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 3 1.2 Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed .
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 2.8
Max -30 8 -230 4.1
Unit V V mA Ω
Static characteristics
[1]
Device mounted on an .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plasti.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NX3008PBKMB |
nexperia |
P-channel MOSFET | |
2 | NX3008PBKMB |
NXP Semiconductors |
MOSFET | |
3 | NX3008PBKS |
nexperia |
Dual P-channel MOSFET | |
4 | NX3008PBKS |
NXP Semiconductors |
MOSFET | |
5 | NX3008PBKV |
NXP Semiconductors |
MOSFET | |
6 | NX3008PBKV |
nexperia |
dual P-channel MOSFET | |
7 | NX3008PBKW |
NXP Semiconductors |
MOSFET | |
8 | NX3008PBKW |
nexperia |
P-channel MOSFET | |
9 | NX3008CBKS |
nexperia |
N/P-channel MOSFET | |
10 | NX3008CBKS |
NXP Semiconductors |
MOSFET | |
11 | NX3008CBKV |
NXP Semiconductors |
MOSFET | |
12 | NX3008CBKV |
nexperia |
N/P-channel MOSFET |