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NX3008PBKV |
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| Part Number | NX3008PBKV |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and ... |
| Features |
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 2.8 Max -30 8 -220 4.1 Unit V V mA Ω Per transistor Static characteristics (per transistor) drain-source on-state VGS = -4.5 V; ID = -200 mA; resistance Tj = ... |
| Document |
 NX3008PBKV Data Sheet
PDF 865.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NX3008PBK |
NXP Semiconductors |
30V 230mA P-channel Trench MOSFET |
|
| 2 | NX3008PBK |
nexperia |
P-channel MOSFET |
|
| 3 | NX3008PBKMB |
nexperia |
P-channel MOSFET |
|
| 4 | NX3008PBKMB |
NXP Semiconductors |
MOSFET |
|
| 5 | NX3008PBKS |
nexperia |
Dual P-channel MOSFET |
|