NX3008NBKV - NXP Semiconductors

NX3008NBKV MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay dri.

Features

 Very fast switching
 Low threshold voltage
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified 1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 1 Max 30 8 400 1.4 Unit V V mA Ω Per transistor Static characteristics (per transistor) [.