NX3008NBKS - nexperia

NX3008NBKS dual N-channel MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ESD protection up to 2 kV • AEC-Q101 qualified 3. Applications • Relay driver • High-spe.

Features

• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ESD protection up to 2 kV
• AEC-Q101 qualified 3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] Static characteristics (per transistor) RDSon drain-source on-state VGS = 4.5 V; ID = 350 mA; Tj = 25 °C resistance Min Typ Max - - 30 -8 - 8 - - .