N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ESD protection up to 2 kV • Ultra thin package profile with 0.37 mm height 3..
• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ESD protection up to 2 kV
• Ultra thin package profile with 0.37 mm height
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 350 mA; Tj = 25 °C resistance
Min Typ Max
-
-
30
-8
-
8
-
-
530
.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NX3008NBK |
nexperia |
N-channel MOSFET | |
2 | NX3008NBK |
NXP |
MOSFET | |
3 | NX3008NBKS |
NXP Semiconductors |
350mA dual N-channel Trench MOSFET | |
4 | NX3008NBKS |
nexperia |
dual N-channel MOSFET | |
5 | NX3008NBKT |
NXP Semiconductors |
MOSFET | |
6 | NX3008NBKV |
nexperia |
Dual N-channel MOSFET | |
7 | NX3008NBKV |
NXP Semiconductors |
MOSFET | |
8 | NX3008NBKW |
NXP Semiconductors |
MOSFET | |
9 | NX3008NBKW |
nexperia |
N-channel MOSFET | |
10 | NX3008CBKS |
nexperia |
N/P-channel MOSFET | |
11 | NX3008CBKS |
NXP Semiconductors |
MOSFET | |
12 | NX3008CBKV |
NXP Semiconductors |
MOSFET |