NX2301P - NXP Semiconductors

NX2301P 2A P-Channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ „ „ „ 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line.

Features

„ „ „ „ 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications „ „ „ „ Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.5 V Tj = 25 °C; VGS = −4.5 V; ID = −1 A [1] Min - Typ 100 Max −20 ±8 −2 120 Unit V V A mΩ [2] [1] [2] Device mounted on an FR4 PCB, sing.