NX2301P nexperia P-channel MOSFET Datasheet, en stock, prix

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NX2301P

nexperia
NX2301P
NX2301P NX2301P
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Part Number NX2301P
Manufacturer nexperia (https://www.nexperia.com/)
Description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ 1.8 V RDS...
Features „ 1.8 V RDSon rated for Low Voltage Gate Drive „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ High-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = −4.5 V Tj = 25 °C; VGS = −4.5 V; ID = −1 A - - −20 V - - ±8 V [1] - - −2 A [2] - 100 120 mΩ [1] Device mounted on an FR4...

Document Datasheet NX2301P Data Sheet
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