NX2301P |
Part Number | NX2301P |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDS... |
Features |
1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified
1.3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS VGS ID
RDSon
drain-source voltage gate-source voltage drain current
drain-source on-state resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C; VGS = −4.5 V
Tj = 25 °C; VGS = −4.5 V; ID = −1 A
- - −20 V - - ±8 V [1] - - −2 A
[2] - 100 120 mΩ
[1] Device mounted on an FR4... |
Document |
NX2301P Data Sheet
PDF 712.65KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NX2301P |
NXP Semiconductors |
2A P-Channel Trench MOSFET | |
2 | NX2305 |
NEXSEM |
SINGLE SUPPLY 12V SYNCHRONOUS PWM CONTROLLER | |
3 | NX2307 |
Microsemi |
SINGLE SUPPLY 12V SYNCHRONOUS PWM CONTROLLER | |
4 | NX2309 |
Microsemi |
SINGLE SUPPLY 12V SYNCHRONOUS PWM CONTROLLER | |
5 | NX2016SF |
NDK |
Crystal Units |