DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 3.6 mW NVCR4LS3D6N08M7A Features • Typical RDS(on) = 2.8 mW at VGS = 10 V • Typical Qg(tot) = 68 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of di.
• Typical RDS(on) = 2.8 mW at VGS = 10 V
• Typical Qg(tot) = 68 nC at VGS = 10 V
• AEC−Q101 Qualified
• RoHS Compliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2768
3810 × 2463.8 3790 ±15 × 2443.8 ±15 3606.3 × 2236.4 359.9 × 517.5 101.6 ±19.1
ORDERING INFORMATION
Device NVCR4LS3D6N08M7A
Package
Wafer Sawn on Foil
RECOMMENDED STORAGE CONDITIONS
Temperature RH
22 to .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVCR4LS004N10MCA |
ON Semiconductor |
N-Channel Power MOSFET | |
2 | NVCR4LS1D3N08M7A |
ON Semiconductor |
N-Channel Power MOSFET | |
3 | NVCR4LS1D7N08M7A |
ON Semiconductor |
N-Channel MOSFET | |
4 | NVCR4LS2D8N08M7A |
ON Semiconductor |
N-Channel MOSFET | |
5 | NVC040N120SC1 |
ON Semiconductor |
SiC MOSFET | |
6 | NVC080N120SC1 |
ON Semiconductor |
SiC MOSFET | |
7 | NVC1001 |
NextChip |
4-Channel Color Video Display ASIC | |
8 | NVC3S5A51PLZ |
ON Semiconductor |
Power MOSFET | |
9 | NVC6S5A354PLZ |
ON Semiconductor |
Power MOSFET | |
10 | NVCLL024Z |
NICHIA |
LED bulb color | |
11 | NVCLL024Z-M2 |
NICHIA |
LED | |
12 | NVCLL024Z-M3 |
NICHIA |
LED |