NVC6S5A354PLZ Power MOSFET 60V, 100mΩ, 4A, P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features 4V drive High ESD protection Low.
4V drive
High ESD protection
Low On-Resistance
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
High Side Load Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
20 V
Drain Current (DC) (Note 2) Drain Current (DC) (Note 3)
ID
4 A 3 A
Drain Current (Pulse) PW 10s, duty cycle 1%
IDP
16 A
Power Dissipation Ta=25C(Note 2) Power Dissipation Ta=25C(Note 3)
1.9 W PD
0.9 W
Junction Temperature and Storage Temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVC040N120SC1 |
ON Semiconductor |
SiC MOSFET | |
2 | NVC080N120SC1 |
ON Semiconductor |
SiC MOSFET | |
3 | NVC1001 |
NextChip |
4-Channel Color Video Display ASIC | |
4 | NVC3S5A51PLZ |
ON Semiconductor |
Power MOSFET | |
5 | NVCLL024Z |
NICHIA |
LED bulb color | |
6 | NVCLL024Z-M2 |
NICHIA |
LED | |
7 | NVCLL024Z-M3 |
NICHIA |
LED | |
8 | NVCLL024Z-M7 |
NICHIA |
LED | |
9 | NVCR4LS004N10MCA |
ON Semiconductor |
N-Channel Power MOSFET | |
10 | NVCR4LS1D3N08M7A |
ON Semiconductor |
N-Channel Power MOSFET | |
11 | NVCR4LS1D7N08M7A |
ON Semiconductor |
N-Channel MOSFET | |
12 | NVCR4LS2D8N08M7A |
ON Semiconductor |
N-Channel MOSFET |