Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, re.
• 1200 V @ TJ = 175°C
• Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A
• High Speed Switching with Low Capacitance
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Applications
• Automotive Traction Inverter
• Automotive DC−DC Converter for EV/HEV
DATA SHEET www.onsemi.com
V(BR)DSS 1200 V
RDS(on) MAX 56 mW @ 20 V
ID MAX 60 A
N−CHANNEL MOSFET D
G S
DIE DIAGRAM
G
S1
S2
S3
Die Information
S Wafer Diameter
S Die Size S Metallization
⋅ Top ⋅ Back S Die Thickness
S Gate Pad.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NVC080N120SC1 |
ON Semiconductor |
SiC MOSFET | |
2 | NVC1001 |
NextChip |
4-Channel Color Video Display ASIC | |
3 | NVC3S5A51PLZ |
ON Semiconductor |
Power MOSFET | |
4 | NVC6S5A354PLZ |
ON Semiconductor |
Power MOSFET | |
5 | NVCLL024Z |
NICHIA |
LED bulb color | |
6 | NVCLL024Z-M2 |
NICHIA |
LED | |
7 | NVCLL024Z-M3 |
NICHIA |
LED | |
8 | NVCLL024Z-M7 |
NICHIA |
LED | |
9 | NVCR4LS004N10MCA |
ON Semiconductor |
N-Channel Power MOSFET | |
10 | NVCR4LS1D3N08M7A |
ON Semiconductor |
N-Channel Power MOSFET | |
11 | NVCR4LS1D7N08M7A |
ON Semiconductor |
N-Channel MOSFET | |
12 | NVCR4LS2D8N08M7A |
ON Semiconductor |
N-Channel MOSFET |