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DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 2.8 mW NVCR4LS2D8N08M7A Features • Typical RDS(on) = 2.2 mW at VGS = 10 V • Typical Qg(tot) = 86 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of di.
• Typical RDS(on) = 2.2 mW at VGS = 10 V
• Typical Qg(tot) = 86 nC at VGS = 10 V
• AEC−Q101 Qualified
• RoHS Compliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2162
4953 × 2413 4933 ±15 × 2393 ±15 4748.7 × 2184.6 427.1 × 549.5 101.6 ±19.1
ORDERING INFORMATION
Device NVCR4LS2D8N08M7A
Package
Wafer Sawn on Foil
RECOMMENDED STORAGE CONDITIONS
Temperature RH
22 to 28°C.
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