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MOSFET – Power, N-Channel 80 V, 1.27 mW NVCR4LS1D3N08M7A Features • Typical RDS(on) = 1.0 mW at VGS = 10 V • Typical Qg(tot) = 172 nC at VGS = 10 V • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passiv.
• Typical RDS(on) = 1.0 mW at VGS = 10 V
• Typical Qg(tot) = 172 nC at VGS = 10 V
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking Gross Die Counts: 1001
6604 x 3683 6584 ± 30 x 3663 ± 30 6399.3 x 3452.6 343.1 x 477.5 101.6 ±19.1
DATA SHEET www.onsemi.com
ORDERING INFORMATION
Device NVCR4LS1D3N08M7A
Package
Wafer Sawn on Foil
RECOMMENDED.
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|---|---|---|---|---|
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