NP6661BQR - natlinear

NP6661BQR N And P-Channel Enhancement Mode MOSFET

Schematic diagram The NP6661BQR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features  N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Chan.

Features

 N-channel： VDS =30V，ID =10A RDS(ON)=9.6mΩ (typical) @ VGS=10V RDS(ON)=13.7mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-10A RDS(ON)=20mΩ (typical) @ VGS=-10V RDS(ON)=29mΩ (typical) @ VGS=-4.5V  Excellent gate charge x RDS(ON) product(FOM)  Very low on-resistance RDS(ON)  150 °C operating temperature  Pb-free lead plating Application N-CH P-CH Marking and pin assignment PDFN3×3-8L （Top View） S1 1 G1 2 S2 3 G2 4 NP6661B XXXX 8 D1 7 D1 6 D2 5 D2  Pch+Nch Complementary MOSFET for DC-FAN  H-Bridge application HF Pb Ordering Information Part Number NP6661BQR-G Storage Tempera.