NP6008N - natlinear

NP6008N 60V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP6008N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D G  VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω)  High density cell design for ultra low Rdson. Marking and pin ass.

Features

D G  VDS =60V ID =10A RDS(ON)<25mΩ @VGS=10V (Typ:21m Ω) S RDS(ON)<28mΩ @VGS=4.5V (Typ:25m Ω)  High density cell design for ultra low Rdson. Marking and pin assignment  Fully characterized avalanche voltage and current. SOT-223  Low gate to drain charge to reduce switching （Top View） losses. Application  Power switching application.  Hard switched and high frequency circuits.  Uninterruptible power supply. Package  SOT-223 HF Pb NP6008N XXXX YYYY NP: Natlinear Power 6008: 60V8A N: SOT-223 XXXX: Wafer Lot No. YYYY: Quality Code Ordering Information Part Number NP6008N.