Schematic diagram The NP6601AMR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel: VDS =30V,ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Chan.
N-channel: VDS =30V,ID =4A RDS(ON)=31.3mΩ (typical) @ VGS=4.5V RDS(ON)=43.8mΩ (typical) @ VGS=2.5V P-Channel: VDS =-30V,ID =-4A RDS(ON)=54.4mΩ (typical) @ VGS=-4.5V RDS(ON)=68.5mΩ (typical) @ VGS=-2.5V Excellent gate charge x RDS(ON) product(FOM) Very low on-resistance RDS(ON) 150 °C operating temperature Pb-free lead plating 100% UIS tested Marking and pin assignment Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification Package SOT-23-6L Ordering Information Part Number NP6601AMR-G Storage Temperature -55°C to +150°C Package SOT-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP6608D6 |
natlinear |
N And P-Channel Enhancement Mode MOSFET | |
2 | NP6608QR |
natlinear |
20V N And P-Channel Enhancement Mode MOSFET | |
3 | NP6661BQR |
natlinear |
N And P-Channel Enhancement Mode MOSFET | |
4 | NP6666D6 |
natlinear |
N And P-Channel Enhancement Mode MOSFET | |
5 | NP6667SR |
natlinear |
N And P-Channel Enhancement Mode MOSFET | |
6 | NP6008BSR |
natlinear |
60V N-Channel Enhancement Mode MOSFET | |
7 | NP6008N |
natlinear |
60V N-Channel Enhancement Mode MOSFET | |
8 | NP6020D6-Sn |
natlinear |
60V N-Channel Enhancement Mode MOSFET | |
9 | NP60N03KUG |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
10 | NP60N03SUG |
Renesas |
N-CHANNEL POWER MOS FET | |
11 | NP60N04KUG |
Renesas |
N-Channel MOSFET | |
12 | NP60N04MUG |
Renesas |
N-Channel Power MOSFET |