NP6008BSR - natlinear

NP6008BSR 60V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP6008BSR uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. D G S.

Features

Marking and pin assignment  VDS =60V，ID =8A RDS(ON)(Typ.)=32mΩ @VGS=10V RDS(ON)(Typ.)=39mΩ @VGS=4.5V  Excellent gate charge RDS(on) product(FOM)  Very low on-resistance RDS(on)  150 °C operating temperature  100% UIS tested Application HF Pb  Synchronus Rectification in DC/DC Converters  Industrial and Motor Drive applications SOP-8 Top View Bottom View D D D D NP6X0XY0XY8XYY G S S S XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6008BSR -G Storage Temperature -55°C to +150°C Package SOP-8 Absolute Maximum Ratings (TA=25℃ unless otherwi.