NP6020D6-Sn - natlinear

NP6020D6-Sn 60V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP6020D6-Sn uses advanced trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Gene.

Features

Marking and pin assignment  VDS =60V，ID =20A RDS(ON)(Typ.)=18.5mΩ @VGS=10V RDS(ON)(Typ.)=22 mΩ @VGS=4.5V  Excellent gate charge x RDS(on) product(FOM)  Very low on-resistance RDS(on)  150 °C operating temperature  100% UIS tested Application  Synchronus Rectification in DC/DC Converters  Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP6020D6-Sn-G Storage Temperature -55°C to +150°C Package PDFN5
*6-8L-A Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source volta.