NP60S10D6 - natlinear

NP60S10D6 100V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP60S10D6 uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features .

Features

 VDS =100V，ID =60A RDS(ON)(Typ.)=4.6mΩ @VGS=10V RDS(ON)(Typ.)=6.5mΩ @VGS=4.5V  Excellent gate charge x RDS(on) product(FOM)  Very low on-resistance RDS(on)  150 °C operating temperature  100% UIS tested Marking and pin assignment Application  Synchronus Rectification in DC/DC and AC/DC Converters  Industrial and Motor Drive applications XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP60S10D6-G Storage Temperature -55°C to +150°C Package PDFN5
*6-8L-A Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage par.