NP60S04D6-Sn - natlinear

NP60S04D6-Sn 40V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP60S04D6-Sn uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. D G S General.

Features

Marking and pin assignment  VDS =40V，ID =60A RDS(ON)(Typ.)= 5.9mΩ @VGS=10V RDS(ON)(Typ.)= 8.9mΩ @VGS=4.5V  Very low on-resistance RDS(on)  150 °C operating temperature  100% UIS tested Application PDFN5
*6-8L-A NP60S04D6 XXXXX YYYYY  Synchronus Rectification in DC/DC Converters  Industrial and Motor Drive applications Package  PDFN5
*6-8L-A HF Pb Top View XXXX—Wafer Information YYYY—Quality Code Bottom View Ordering Information Part Number NP60S04D6-Sn-G Storage Temperature -55°C to +150°C Package PDFN5
*6-8L-A Devices Per Reel 5000 Absolute Maximum Ratings (TA=25℃ unless oth.