NP3416BEMR - natlinear

NP3416BEMR 20V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP3416BEMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =20V，ID =4A RDS(ON)(Typ.)=18.5mΩ @VGS=4.5V RDS(ON)(Typ.)=23.3mΩ @VGS=2.5V  High power and current ha.

Features

 VDS =20V，ID =4A RDS(ON)(Typ.)=18.5mΩ @VGS=4.5V RDS(ON)(Typ.)=23.3mΩ @VGS=2.5V  High power and current handing capability  Lead free product is acquired  Surface mount package  ESD Rating: 2500V HBM Marking and pin assignment Application  PWM applications  Load switch Package  SOT-23-3L Ordering Information Part Number NP3416BEMR-G Storage Temperature -55°C to +150°C Package SOT-23-3L Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current Pulsed Drain Current C Maximum power dissipation B Opera.