NP3407VR - natlinear

NP3407VR 30V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP3407VR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-30V，ID =-4A RDS(ON)(Typ.)=45mΩ @VGS=-10V RDS(ON)(Typ.)=62mΩ @VGS=-4.5V  High power and current handi.

Features

 VDS =-30V，ID =-4A RDS(ON)(Typ.)=45mΩ @VGS=-10V RDS(ON)(Typ.)=62mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment Application  PWM applications  Load switch Package  SOT-23 Ordering Information Part Number NP3407VR-G Storage Temperature -55°C to +150°C Package SOT-23 Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter Continuous Drain Current (TJ = 150 °C) Continuous Source-Drain Diode Current Pulsed Drain Curr.