NP3007DR - natlinear

NP3007DR 30V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP3007DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  VDS =-30V，ID =-7A RDS(ON)(Typ.)=28mΩ @VGS=-10V RDS(ON)(Typ.)=36mΩ @VGS=-4.5V  High power and curr.

Features

D  VDS =-30V，ID =-7A RDS(ON)(Typ.)=28mΩ @VGS=-10V RDS(ON)(Typ.)=36mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Application Marking and pin assignment DFN2
*2-6L-B （Thickness 0.55mm） Top View Bottom View NP3007  PWM applications  Load switch Package  DFN2
*2-6L-B HF Pb NP----Natlinear Power 3007----NP3007 Ordering Information Part Number NP3007DR-G Storage Temperature -55°C to +150°C Package DFN2
*2-6L-B Devices Per Reel 4000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source vol.