Schematic diagram The NP3404VR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features VDS =30V,ID =5A RDS(ON)(Typ.)=23mΩ @VGS=10V RDS(ON)(Typ.)=30mΩ @VGS=4.5V High power and cu.
VDS =30V,ID =5A RDS(ON)(Typ.)=23mΩ @VGS=10V RDS(ON)(Typ.)=30mΩ @VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package Application PWM applications Load switch Package SOT-23 HF Pb S Marking and pin assignment SOT-23 (TOP VIEW) D 3 NP3404 1 2 G S Ordering Information Part Number NP3404VR-G Storage Temperature -55°C to +150°C Package SOT-23 Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Drain Current-Continuous (Silicon Limited) Pu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP3401MR-M |
natlinear |
30V P-Channel Enhancement Mode MOSFET | |
2 | NP3401VR |
natlinear |
30V P-Channel Enhancement Mode MOSFET | |
3 | NP3407VR |
natlinear |
30V P-Channel Enhancement Mode MOSFET | |
4 | NP3409MR |
natlinear |
30V P-Channel Enhancement Mode MOSFET | |
5 | NP3416BEMR |
natlinear |
20V N-Channel Enhancement Mode MOSFET | |
6 | NP34N055HHE |
NEC |
N-Channel Power MOSFET | |
7 | NP34N055HLE |
Renesas |
N-Channel Power MOSFET | |
8 | NP34N055IHE |
NEC |
N-Channel Power MOSFET | |
9 | NP34N055ILE |
Renesas |
N-Channel Power MOSFET | |
10 | NP34N055SHE |
Renesas |
N-Channel Power MOSFET | |
11 | NP34N055SLE |
Renesas |
N-Channel Power MOSFET | |
12 | NP3007DR |
natlinear |
30V P-Channel Enhancement Mode MOSFET |