NP3409MR - natlinear

NP3409MR 30V P-Channel Enhancement Mode MOSFET

Schematic diagram The NP3409MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-30V，ID =-6A RDS(ON)(Typ.)=29mΩ @VGS=-10V RDS(ON)(Typ.)=59mΩ @VGS=-4.5V  High power and current handin.

Features

 VDS =-30V，ID =-6A RDS(ON)(Typ.)=29mΩ @VGS=-10V RDS(ON)(Typ.)=59mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Application S G D Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 349L  PWM applications  Load switch Package  SOT-23-3L 1 2 G S HF Pb 349—NP3409 L—Package Information Ordering Information Part Number NP3409MR-G Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage parameter C.