NCEP023N10T - NCE Power Semiconductor

NCEP023N10T N-Channel Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/D.

Features

● VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP023N10T NCEP023N10T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) .