The NCEP0112AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V.
● VDS =100V,ID =12A RDS(ON)=9.9mΩ (typical) @ VGS=10V RDS(ON)=11.5mΩ (typical) @ VGS=4.5V
Schematic diagram
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Marking and pin assignment
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP0112AS
NCEP0112A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCEP0114AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
2 | NCEP0116AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
3 | NCEP0140AG |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
4 | NCEP0140AL |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
5 | NCEP0160F |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
6 | NCEP0160G |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
7 | NCEP0178 |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
8 | NCEP0178A |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
9 | NCEP0178AF |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
10 | NCEP0178AK |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
11 | NCEP0178AL |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
12 | NCEP0190G |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET |