NCEP0140AL - NCE Power Semiconductor

NCEP0140AL N-Channel Super Trench Power MOSFET

The NCEP0140AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V.

Features

● VDS =100V,ID =45A RDS(ON)=18mΩ (typical) @ VGS=10V RDS(ON)=22mΩ (typical) @ VGS=4.5V Schematic Diagram
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Marking and pin assignment Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! TO-251S top view Package Marking and Ordering Information Device Marking Device Device Package N.