NCEP023N10T |
Part Number | NCEP023N10T |
Manufacturer | NCE Power Semiconductor |
Description | The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are mini... |
Features |
● VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP023N10T NCEP023N10T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ... |
Document |
NCEP023N10T Data Sheet
PDF 547.00KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCEP0112AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
2 | NCEP0114AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
3 | NCEP0116AS |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
4 | NCEP0140AG |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET | |
5 | NCEP0140AL |
NCE Power Semiconductor |
N-Channel Super Trench Power MOSFET |