NCEP023N10T NCE Power Semiconductor N-Channel Power MOSFET Datasheet, en stock, prix

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NCEP023N10T

NCE Power Semiconductor
NCEP023N10T
NCEP023N10T NCEP023N10T
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Part Number NCEP023N10T
Manufacturer NCE Power Semiconductor
Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are mini...
Features
● VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP023N10T NCEP023N10T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ...

Document Datasheet NCEP023N10T Data Sheet
PDF 547.00KB
Distributor Stock Price Buy

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