NCEP0160G - NCE Power Semiconductor

NCEP0160G N-Channel Super Trench Power MOSFET

The NCEP0160G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,.

Features

● VDS =100V,ID =60A RDS(ON) <8.5mΩ @ VGS=10V （Primary Version） Schematic diagram
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Marking and pin assignment Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package NCEP0160G NCEP0160G DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC.