The NCE6020L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and un.
● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-251S top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE6020L
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE6020AI |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE6020AK |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE6020AL |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE6020I |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
5 | NCE6020K |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
6 | NCE6003 |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
7 | NCE6003M |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
8 | NCE6003Y |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | NCE6005AR |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | NCE6005AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
11 | NCE6005R |
NCE Power |
NCE N-Channel Enhancement Mode Power MOSFET | |
12 | NCE6005S |
NCE Power |
N-Channel Enhancement Mode Power MOSFET |