The NCE3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. D G Genera Features ● VDS = 30V,ID = 5.8A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package A.
● VDS = 30V,ID = 5.8A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●Load switch
●PWM application
S Schematic diagram
Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3404
NCE3404
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE3400 |
NCE Power Semiconductor |
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2 | NCE3400A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE3400AY |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE3401 |
NCEPOWER |
P-Channel Enhancement Mode Power MOSFET | |
5 | NCE3401A |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET | |
6 | NCE3401AY |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
7 | NCE3401Y |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
8 | NCE3402 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | NCE3402A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | NCE3404Y |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
11 | NCE3407 |
NCEPOWER |
P-Channel Enhancement Mode Power MOSFET | |
12 | NCE3407A |
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NCE P-Channel Enhancement Mode Power MOSFET |