NCE3402 - NCE Power Semiconductor

NCE3402 N-Channel Enhancement Mode Power MOSFET

The NCE3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 30V,ID = 3A RDS(ON) < 75mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.5V ● High power and current handing capabili.

Features

● VDS = 30V,ID = 3A RDS(ON) < 75mΩ @ VGS=2.5V RDS(ON) < 65mΩ @ VGS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package D G S Schematic diagram Marking and pin assignment Application
● Battery protection
● Load switch
● Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 3402 NCE3402 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS D.