The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. D G GENERAL FEATURES ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V S Schem.
● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V
S Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
3400
NCE3400
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-So.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NCE3400A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
2 | NCE3400AY |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE3401 |
NCEPOWER |
P-Channel Enhancement Mode Power MOSFET | |
4 | NCE3401A |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET | |
5 | NCE3401AY |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
6 | NCE3401Y |
NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET | |
7 | NCE3402 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
8 | NCE3402A |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
9 | NCE3404 |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
10 | NCE3404Y |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
11 | NCE3407 |
NCEPOWER |
P-Channel Enhancement Mode Power MOSFET | |
12 | NCE3407A |
NCE Power Semiconductor |
NCE P-Channel Enhancement Mode Power MOSFET |